Variation of some physical properties of CuInS2 films by substrate temperature

A. S. Meshram¹ , Y. D. Tembhurkar² , O. P. Chimankar³

Section:Research Paper, Product Type: Isroset-Journal
Vol.7 , Issue.2 , pp.12-23, Apr-2019

CrossRef-DOI:   https://doi.org/10.26438/ijsrpas/v7i2.1223

Online published on Apr 30, 2019

Copyright © A. S. Meshram, Y. D. Tembhurkar, O. P. Chimankar . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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Abstract :
Spray pyrolysis is one of the most convenient, economical, inexpensive and simple methods for depositing large area semiconducting thin films. Semiconducting ternary CuInS2 thin films have been deposited onto the glass substrate by varying substrate temperature from 2750C, at the interval of 25 to 3500C by using aqueous solution of Cupric chloride, Indium tri-chloride and thiourea of 0.02 M and Seems to be one of the more important parameters affecting the physical properties of the semiconductor. The lattice parameter a and c at room temperature of the tetragonal unit cell were calculated for all these samples by Bruker AXS D8 Advance X-ray diffraction (XRD) techniques with Cu Kα (wavelength = 1.5418 Ă…) radiation.Conductivity of thin films determined by Four Probe method and hot probe technique wasdetermined to exhibit p-type conductivity. Due to temperature effect, shows the atoms are arrange regular in compound of these samples prepared at various temperatures 250, 300 and 3500C. As the films are not doped intentionally defect observed in intrinsic nature operative to be produced by Sulphur interstitials. Grain sizes were studied by Scanning Electron Microscope.

Key-Words / Index Term :
Spray pyrolysis; CuInS2 Ternary Semiconductor; XRD; Four Probe Technique

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