Effect of defect density in different layers and ambient temperature of n-i-p a-Si single junction solar cells performance

Shalini Dubey¹ , Arpit Swarup Mathur² , Nidhi ³ , BP Singh⁴

Section:Research Paper, Product Type: Isroset-Journal
Vol.7 , Issue.2 , pp.93-98, Apr-2019

CrossRef-DOI:   https://doi.org/10.26438/ijsrpas/v7i2.9398

Online published on Apr 30, 2019

Copyright © Shalini Dubey, Arpit Swarup Mathur, Nidhi, BP Singh . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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Abstract :
In this paper simulation study of optimized n-i-p a-si single junction solar cell which having defect density in different layers. From the simulation result, it was found that the conversion efficiency is affected due to the presence of defect density in different layers. The maximum conversion efficiency is found 24.74% and 22.94% at without defect density at 0ÂşC and 30ÂşC respectively, while the conversion efficiency become zero in p-type front layer in 1022 cm-3 defect density and 11.35% in i-type absorber layer in 10-21 cm-3 defect density. It is clear that the quality of absorber layer and front layer is the key factor in cell performance or efficiency improvement. These results are consistence with the fact that n-i-p a-Si single junction solar cell with the higher defect densities and dislocation exhibits a lower efficiency of the cell.

Key-Words / Index Term :
a-Si single-junction, defect density, conversion efficiency, SCAPS, BSF

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