Effect of defect density in different layers and ambient temperature of n-i-p a-Si single junction solar cells performance

Shalini Dubey¹ , Arpit Swarup Mathur² , Nidhi ³ , BP Singh⁴

Section:Research Paper, Product Type: Isroset-Journal
Vol.7 , Issue.2 , pp.93-98, Apr-2019

CrossRef-DOI:   https://doi.org/10.26438/ijsrpas/v7i2.9398

Online published on Apr 30, 2019

Copyright © Shalini Dubey, Arpit Swarup Mathur, Nidhi, BP Singh . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

View this paper at   Google Scholar | DPI Digital Library

XML View     PDF Download

How to Cite this Paper

749 Views    199 Downloads    92 Downloads

Abstract :
In this paper simulation study of optimized n-i-p a-si single junction solar cell which having defect density in different layers. From the simulation result, it was found that the conversion efficiency is affected due to the presence of defect density in different layers. The maximum conversion efficiency is found 24.74% and 22.94% at without defect density at 0ÂşC and 30ÂşC respectively, while the conversion efficiency become zero in p-type front layer in 1022 cm-3 defect density and 11.35% in i-type absorber layer in 10-21 cm-3 defect density. It is clear that the quality of absorber layer and front layer is the key factor in cell performance or efficiency improvement. These results are consistence with the fact that n-i-p a-Si single junction solar cell with the higher defect densities and dislocation exhibits a lower efficiency of the cell.

Key-Words / Index Term :
a-Si single-junction, defect density, conversion efficiency, SCAPS, BSF

References :
[1] R. C. Chittick, J. H. Alexander, and H. F. Sterling, “The preparation and properties of amorphous silicon,” Journal of the Electrochemical Society, vol. 116 No. 1, pp. 77–81, 1969.
[2] S. Zhong, X. Hua, and W. Shen, Simulation of High-Efficiency Crystalline Silicon Solar Cells With Homo–Hetero Junctions, IEEE Transactions on Electron devices, vol. 60 No. 7, p.p. 2104, july 2013.
[3] A. Fell, K. R. McIntosh, P. P. Altermatt, G. J. M. Janssen, R. Stangl, A. Ho-Baillie, H. Steinkemper, J. Greulich, M. M¨uller, B. Min, K. C. Fong, M. Hermle, I. G. Romijn, and M. D. Abbott, Input Parameters for the Simulation of Silicon Solar Cells in 2014, IEEE journal of photovoltaics, vol.5, No.4, p.p. 1250, july 2015.
[4] S. Sepeai, S.H.Zaidi, M.K.M.Desa, M.Y.Sulaiman, N.A.Ludin, M.A. Ibrahim, K.Sopian, Design Optimization of Bifacial Solar Cell by PC1D Simulation, Journal of Energy Technologies and Policy, vol.3, No.5, p.p. 1-11, 2013.
[5] H. Singh, V. Kumar, Effect of Ni doping on the photovoltaic conversion efficiency of ZnO nanostructured dye sensitized solar cells, International Journal of Scientific Research in Physics and Applied Science, vol. 6, No. 3, pp. 50-54, 2018.
[6] T. H. Talukdar; R. Siddique; M. Hasan, Study of Single Junction Solar Cell Characteristics Varying Different Parameters, 2nd Int`l Conf. on Electrical Engineering and Information & Communication Technology (ICEEICT) 2015 Jahangir nagar University, Dhaka-I 342, Bangladesh, 21-23 May 2015.
[7] M. Burgelman, P. Nollet and S. Degrave, "Modeling of polycrystalline semi conductor solar cells", Thin Solid Films, vol. 361, No.362, pp.527-532, 2000.
[8] A. Niemegeers and M. Burgelman, “Numerical modeling of ac-characteristics of CdTe and CIS solar cells”, 25th IEEE Photovoltaic specialist Conference Washington DC 1996, pp. 901-904,1996.
[9] M. A. Green, “General temperature dependence of solar cell performance and implications for device modeling” Prog Photovoltiac,vol.11, No.5,pp.333-340, 2003.
[10] P.Ĺ tulik and J. Singh, A simple method to simulate the influence of defect on the short circuit current in amorphous silicon solar cells, J. Non-Crysta Solids, vol.226,No.3 pp.299-303,1998.
[11] H. Taniguchi, M.Konagai, K. S. Lim, P. Sichanugrist, K. Komori and K. Takahashi, Junction Properties of n-i-p and p-i-n Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane, Japanese J Appl Phys,vol. 21,pp.219-224,1982.
[12] H. Arai, M. Ishii, H. Shinohara, and S. Yamazaki, A Single p-i-n Junction Amorphous-Silicon Solar Cell with Conversion Efficiency of 12.65%, IEEE Electron Device Letters,vol.12 No.8, 1991.
[13] T. Itoh, K. Fukunaga, Y. Katoh, T. Fujiwara, and S. Nonomura, “Doping of a-SiCX:H films including μc-Si:H by hot-wire CVD and their application as a wide gap window for heterojunction solar cells,” Solar Energy Materials and Solar Cells, vol. 74No.1–4,pp.379–385, 2002.
[14] J. Verma, P. Dey, A. Prajapati, T. D. Das, Multi BSF Layer InGaP/GaAs High Efficiency Solar Cell, 2017 11th International Conference on Intelligent Systems and Control (ISCO),2017.
[15] S. Y. Myong, S. S. Kim, and K. S. Lim, “Improvement of p-i-n-type Amorphous Silicon Solar Cell Performance by Employing Double Silicon-carbide Player Structure”J. Appl. Phys. vol. 95, pp.1525-1531, 2004.
[16] A. Defresne, O. Plantevin , I. P. Sobkowicz, J. Bourçois, P. Roca iCabarrocas, “Interface defects in a-Si:H/c-Si heterojunction solar cells”, Nuclear Instruments and Methods in Physics Research B, vol. 365, part-A, pp. 133-136, 2015.
[17] W. Ma, S. Aoyama, H. Okamoto, and Y. Hamakawa, “A study of interface properties in a-Si solar cells with μc-Si(C)” Sol. Energy Mater. Sol. Cells, vol. 41, pp. 453-457, 1996.
[18] N.Palit and P. Chatterjee, “Computer analysis of a-Si:Ha-Si:H p-i-n solar cells with a hydrogenated microcrystalline silicon p layer, J Appl. Phys., vol. 86, pp. 6879-6885, 1999.
[19] T. Walter, R. Herberholz, C. Muller, and H. W. Schock, “Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions J. Appl. Phys., vol. 80, pp.441-448, 1996.
[20] K. Decock, S. Khelifi, M. Burgelman, “Modelling multivalent defects in thin film solar cells”, Thin Solid Films, vol.519, pp.7481–7484, 2011.