Effect of Annealing Temperature on Structural and Optical properties of Mn doped SnO2 Thin Films Prepared by Sol-Gel Technique

Sunaina ¹ , Parikshit Sharma² , Prianka Sharma³

Section:Research Paper, Product Type: Isroset-Journal
Vol.7 , Issue.2 , pp.99-107, Apr-2019

CrossRef-DOI:   https://doi.org/10.26438/ijsrpas/v7i2.99107

Online published on Apr 30, 2019

Copyright © Sunaina, Parikshit Sharma , Prianka Sharma . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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Abstract :
Mn doped SnO2 thin films were prepared by sol-gel dip coating technique. The deposited films on glass substrate were annealed at 300oC, 400oC and 500oC. The effect of annealing temperature on the structure and optical properties of the Mn-SnO2 thin films have been studied by X-ray diffraction and UV-Vis spectrophotometry. X-ray diffraction studies shows the tetragonal rutile structure of SnO2 with no additional phases of SnO2. Various parameters like crystallite size, lattice constants, dislocation density and microstrain have been calculated and found to vary with annealing temperature. The optical transmission spectra shows a red shift in the position of absorption edge towards higher wavelength for Mn- doped thin films but as the annealing temperature increases, the absorption edge shifts toward lower wavelengths. The optical constants and the optical parameters were determined by the spectral transmittance data.

Key-Words / Index Term :
Diluted Magnetic Semiconductors, Mn-SnO2 thin films, Sol-Gel Dip Coating method, Annealing Temperature, Band Gap, Urbach’s Energy

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