Role of Ni Doping on Structural, Electronic and Transport Properties of ZnO Thin Films

Tanveer Ahmad Dar¹ , Arpana Agrawal² , Pratima Sen³

Section:Research Paper, Product Type: Isroset-Journal
Vol.3 , Issue.2 , pp.9-11, Mar-2015

Online published on Apr 30, 2015

Copyright © Tanveer Ahmad Dar, Arpana Agrawal , Pratima Sen . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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Abstract :
Nickel doped (Ni=0.05) and undoped Zinc Oxide (ZnO) thin films have been prepared by Pulsed laser deposition (PLD) technique. The structural analysis of the films was done by X-ray diffraction (XRD) studies which reveal absence of any secondary phase in the prepared samples. UV transmission spectra show that Ni doping reduces the transparency of the films. X-ray Photoelectron spectroscopy (XPS) shows the presence of metallic Ni is present in the sample. Low temperature magneto transport properties of the ZnO and NiZnO films are also discussed in view of Khosla fisher model. Ni doping in ZnO results in decrease in magnitude of negative MR.

Key-Words / Index Term :
II–VI semiconductors, X-ray diffraction, X-ray photoelectron spectroscopy

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