Semiconductor Nano Materials for Wide Bandgap Photonic and Optoelectronic Device Applications

H.I. Ikeri¹ , A.I. Onyia² , S.T. Harry³ , O.J. Vwavware⁴

Section:Research Paper, Product Type: Journal-Paper
Vol.9 , Issue.6 , pp.92-95, Dec-2021

Online published on Dec 31, 2021

Copyright © H.I. Ikeri, A.I. Onyia, S.T. Harry, O.J. Vwavware . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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Abstract :
CdS, CdSe, ZnS, GaAs, InSb, InAs, PbS, PbSe and PbTe Quantum dots (QDs) have been quantitatively studied for wide bandgap device applications using Brus model. The results strongly indicate that absorption and emission bands of QDs broaden with decreasing dot size leading to dramatic increase in energy of band-to-band excitation peaks and photoluminescence spectra compared to the spectrum of the materials in bulk form. These wide bandgap QDs differ significantly from conventional semiconductors as a result of their larger bandgap that is tunable by dimensional constraints due to quantum confinement and therefore exhibit tremendous advantages in terms of power capability, energy conversion efficiency, optical properties, radiation strength, high temperature, and high frequency operation suitable for high frequency fields, power electronics, solid state lightings etc. Wide bandgap semiconductor QDs also play an important role in optical absorption and emission of ultraviolet (UV) light for photonic and optoelectronic devices. Among the QDs, ZnS possesses the largest band gap (~ 8.5 eV) and hence exhibits widest and broadband spectral range and should be studied extensively due to its applicability in transparent electronics.

Key-Words / Index Term :
Wide bandgap, semiconductor, Quantum dot, emission and absorption, ultraviolet (UV) light, confinement

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