Synthesis and study of reflectance and transmittance of a transparent conducting oxide: Niobium (Nb) doped Titanium dioxide (TiO2) at different doping concentrations

R. K. Das¹

1. Dept. of Physics, Charuchandra College, University of Calcutta, Kolkata, India.

Correspondence should be addressed to: rkdas_171171@rediffmail.com.

Section:Research Paper, Product Type: Isroset-Journal
Vol.6 , Issue.1 , pp.27-31, Feb-2018

CrossRef-DOI:   https://doi.org/10.26438/ijsrpas/v6i1.2731

Online published on Feb 28, 2018

Copyright © R. K. Das . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

View this paper at   Google Scholar | DPI Digital Library

XML View     PDF Download

How to Cite this Paper

606 Views    334 Downloads    213 Downloads

Abstract :
In this paper we have successfully prepared the Niobium (Nb) doped Titanium dioxide (TiO2) thin film with different Nb doping concentration. There are many methods for the synthesis of Nb doped TiO2 thin films such as sputtering, pulsed laser deposition, chemical vapour deposition, sprays pyrolysis and sol-gel methods. But here Nb doped TiO2 thin films were coated on glass substrate by sol-gel spin coating technique. Diffused reflectance and transmittance has been studied with different doping concentration. We have measured diffuse reflectance of Nb doped TiO2 thin films by taking different Nb concentrations with the help of Diffuse Reflectance Spectrometer (DRS). It is clear there are differences in the position of the absorption edge. It is observed that the total reflectance for Nb doped TiO2 thin film changes with increasing the Nb concentration. The experimental results indicated that the optimum concentration is 5wt. % and can be used to obtain Nb doped TiO2 thin films with a very high transmittance (88.5 %). We observed different absorption edge at different wavelength which depends on the doping concentrations. The samples showed a better transmittance in the visible region and a sharp fall in the UV region. The increase of the surface roughness leading to decrease of the peak values.

Key-Words / Index Term :
Doping, Reflectance, Transmittance, thin films, Sol-Gel method

References :
[1] D. S. Ginley and C. Bright, “Transparent Conducting Oxides” ,Material Research Bulletin, Vol.25, Issue.8, pp. 15-18, 2000.
[2] H. L. Hartnagel, A. L. Dawar, A. K. Jain, and C. Jagadish, “Semiconducting Transarent Thin fims”, IOP Publishing, 1997.
[3] J.-H. Lim, D.-K.Hwang, H.-S.Kim, J.-Y. Oh, J.-H. Yang, R. Navamathavan, and S.-J. Park, “Low resistivity and transparent indium – oxide – doped ZnO ohmic contact to p- type GaN”, Applied Physics Letters, Vol. 85, Issue.25, pp.6191-6193, 2004.
[4] M. Kambe, K. Sato, D. Kobayashi, Y. Kurokawa, S. Miyajima, M. Fukawa, N. Taneda, A. Yamada, and M. Konagai, “Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures”, Japnease Journal Applied Physics, Vol. 45 ,Issue1, pp. 1415 ,2006.
[5] A. Fujishima and K. Honda, “ Electrochemical Photolysis of Water at a Semiconductor Electrode”, Nature, Vol.238,pp. 37-38, 1972.
[6] O. Carp, C. L. Huisman, and A. Reller, “Photoinduced reactivity of titanium oxide“, Prog. Solid State Chemistry, Vol. 32, Issue. 1-2, pp.33-177, 2004.
[7] A. I. Kingon, J.-P. Maria, S. K. Streiffer, “ Alternative dielectrics to silicon dioxide for memory and logic devices”, Nature, Vol. 406,Issue.6799, pp. 1032-1038, 2000.
[8] M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya, “Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks” , Applied Physics Letters , Vol.89,Issue. 22, pp. 223509, 2006.
[9] Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M.Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma,” Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide”, Science, Vol. 291, Issue. 5505, pp.854-856, 2001.
[10]K. Hashimoto, H. Irie, and A. Fujishima, “ TiO2 Photocatalysis: A Historical Overview and Future Prospects”, Japnease Journal of Applied Physics, Vol. 44, Issue. 12R, pp.8269 , 2005.
[11] T. Fukumura, H. Toyosaki and Y. Yamada, “A Ferromagnetic Oxide Semiconductor as Spin Injection Electrode in Magnetic Tunnel Junction”, Semiconductor Science Technology, Vol. 20, pp.S103, 2005
[12]W. Wunderlich, T. Oekermann, L. Miao, et al. “Electronic properties ofnano-porous TiO2-and ZnO-thin films-comparison of simulations and experiments”. J. Ceram Process Res, Vol. 5, Issue. 4, pp. 343–354, 2004.
[13]A. T. Paxton, L. Thiên-Nga. “Electronic structure of reduced titanium dioxide”. Physical Review B, Vol.57, Issue. 3, pp.1579–1584, 1998
[14]S. Banerjee, J. Gopal, P. Muraleedharan, A.K. Tyagi, B. Raj,“Physics and chemistry ofphotocatalytic titanium dioxide: Visualization of bactericidal activityusing atomic force microscopy”, Current Science, Vol. 90, Issue. 10, pp. 1378-1383, 2006.