Study of the Optical and Solid-State Properties of Copper Manganese Sulphide (CuMnS) Thin Film Semiconductors for Possible Optoelectronics Applications

A.N. Nwori¹ , L.N. Ezenwaka² , I.E. Ottih³ , N.A. Okereke⁴ , N.S. Umeokwona⁵ , N.L. Okoli⁶ , I. O. Obimma⁷

Section:Research Paper, Product Type: Journal-Paper
Vol.8 , Issue.3 , pp.23-33, Sep-2021

Online published on Sep 30, 2021

Copyright © A.N. Nwori, L.N. Ezenwaka, I.E. Ottih, N.A. Okereke, N.S. Umeokwona, N.L. Okoli, I. O. Obimma . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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Abstract :
The study of optical and solid-state properties of semiconductor thin films of CuMnS that can be used for optoelectronic applications have been carried out. Before the study, the films were synthesized on conductive fluorine-doped tin oxide (FTO) glass substrate by optimizing deposition voltage using an electrodeposition method. Copper sulphate, Manganese sulphate and Thiourea were the starting materials used to source copper, manganese and sulphur ions respectively. The synthesized thin films were characterized for their optical properties using a UV-VIS spectrophotometer. The results showed that the synthesized thin films of CuMnS absorb high in both visible (VIS) and near-infrared (NIR) regions of the electromagnetic spectrum and the absorbance decrease with an increase in deposition voltage. The transmittance and reflectance of the films are low throughout the VIS and NIR except the film deposited at 1.0 V which increase with wavelength. The refractive index of the films is found to be high both in VIS and NIR regions and equally increased with an increase in deposition voltage. The extinction coefficient which determines the rate at which light is lost in a material is low for the films and increases with wavelength except for the film deposited at 1.0 V which has the highest value of 0.25 in the VIS and NIR regions. The bandgap energy of the films decreases as deposition voltage increased and is found to be in the range of 1.9 eV to 2.2 eV. The Urbach energy of the films is low (0.4 to 1.8 eV) with the highest value exhibited by the film deposited at a voltage of 1.0 V. These properties place the films to be good materials for many applications such as in photovoltaic cell application, photothermal, light-emitting diodes (LEDs) and in high-temperature devices.

Key-Words / Index Term :
Copper Manganese Sulphide, Extinction Coefficient, Bandgap, Urbah energy, LED

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