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Study Over Electronic and Optical Properties of Semiconductors in Nanometric Regime

H.I. Ikeri1 , V.M. Adokor2 , N.N. Tasie3

  1. Department of Physics, Kingsley Ozumba Mbadiwe University.
  2. Federal College of Education Omoku Rivers State.
  3. Department of Physics, Rivers State University.

Section:Research Paper, Product Type: Journal-Paper
Vol.9 , Issue.3 , pp.1-7, Dec-2022


Online published on Dec 31, 2022


Copyright © H.I. Ikeri, V.M. Adokor, N.N. Tasie . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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IEEE Style Citation: H.I. Ikeri, V.M. Adokor, N.N. Tasie, “Study Over Electronic and Optical Properties of Semiconductors in Nanometric Regime,” Journal of Physics and Chemistry of Materials, Vol.9, Issue.3, pp.1-7, 2022.

MLA Style Citation: H.I. Ikeri, V.M. Adokor, N.N. Tasie "Study Over Electronic and Optical Properties of Semiconductors in Nanometric Regime." Journal of Physics and Chemistry of Materials 9.3 (2022): 1-7.

APA Style Citation: H.I. Ikeri, V.M. Adokor, N.N. Tasie, (2022). Study Over Electronic and Optical Properties of Semiconductors in Nanometric Regime. Journal of Physics and Chemistry of Materials, 9(3), 1-7.

BibTex Style Citation:
@article{Ikeri_2022,
author = {H.I. Ikeri, V.M. Adokor, N.N. Tasie},
title = {Study Over Electronic and Optical Properties of Semiconductors in Nanometric Regime},
journal = {Journal of Physics and Chemistry of Materials},
issue_date = {12 2022},
volume = {9},
Issue = {3},
month = {12},
year = {2022},
issn = {2347-2693},
pages = {1-7},
url = {https://www.isroset.org/journal/JPCM/full_paper_view.php?paper_id=3025},
publisher = {IJCSE, Indore, INDIA},
}

RIS Style Citation:
TY - JOUR
UR - https://www.isroset.org/journal/JPCM/full_paper_view.php?paper_id=3025
TI - Study Over Electronic and Optical Properties of Semiconductors in Nanometric Regime
T2 - Journal of Physics and Chemistry of Materials
AU - H.I. Ikeri, V.M. Adokor, N.N. Tasie
PY - 2022
DA - 2022/12/31
PB - IJCSE, Indore, INDIA
SP - 1-7
IS - 3
VL - 9
SN - 2347-2693
ER -

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Abstract :
Electronic and optical properties of semiconductors in nanometric regime have been simulated using the potential well concept and solving 3D Schrodinger equation. We calculated the optical bandgap and wavelength for varying sizes of semiconductor quantum dots QDs. The result shows a size-dependent absorption and fluorescence spectra with discrete electronic transitions that can be modified by size modulation. As a result, they exhibit excellent photoelectronic properties, including broad excitation spectra with narrow emission bands, and so can be used for multiplexed detection without overlap of spectral emission. They also possess wide band bandgap energies and have shown significant changes in their optical transitions with bandgap tuning. This illustration is in the outstanding blueshift of absorption bands as well as the photoluminescence spectra with decreasing size. These properties represent a signature of discrete electronic state, which is, in turn, a direct consequence of the quantum confinement effect. The optical spectra observed for CdSe and CdS QDs span nearly the entire visible region which makes them excellent fluorescent materials for improving display performance such as color gamut. In addition, near-infrared (NIR) waveband also observed in CdSe and CdS QDs cover the biological transparency windows and are widely explored for biological imaging applications following their deeper tissue penetration and higher spatial resolution compare to visible probes. The optical waveband observed in InAs, InSb QDs covers the short-wavelength infrared spectral region suitable for optical communication operating exclusively in C-band, at which chromatic dispersion and transmission losses in optical fibers are at a respective minimum. Furthermore, InAs, InSb QDs strongly indicate spectrum covering the important atmospheric transmission windows where attenuation of electromagnetic wave is extremely low particularly for free space communications. It is found that PbS, PbSe and PbSe QDs display exceptional optical trait that can be tuned throughout UV to IR wavebands, favorable for quantitative gain in solar cells applications.

Key-Words / Index Term :
Semiconductor nanocrystals, confinement, potential well, Schrodinger equation, electronic and optical properties

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