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Theoretical Characterization of Semiconductor Nano-structures for Infrared Device Applications

H.I. Ikeri1 , A.I. Onyia2 , G.C. Ogbu3 , F.N. Kalu4

Section:Research Paper, Product Type: Journal-Paper
Vol.8 , Issue.4 , pp.21-25, Dec-2021


Online published on Dec 31, 2021


Copyright © H.I. Ikeri, A.I. Onyia, G.C. Ogbu, F.N. Kalu . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
 

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IEEE Style Citation: H.I. Ikeri, A.I. Onyia, G.C. Ogbu, F.N. Kalu, “Theoretical Characterization of Semiconductor Nano-structures for Infrared Device Applications,” World Academics Journal of Engineering Sciences, Vol.8, Issue.4, pp.21-25, 2021.

MLA Style Citation: H.I. Ikeri, A.I. Onyia, G.C. Ogbu, F.N. Kalu "Theoretical Characterization of Semiconductor Nano-structures for Infrared Device Applications." World Academics Journal of Engineering Sciences 8.4 (2021): 21-25.

APA Style Citation: H.I. Ikeri, A.I. Onyia, G.C. Ogbu, F.N. Kalu, (2021). Theoretical Characterization of Semiconductor Nano-structures for Infrared Device Applications. World Academics Journal of Engineering Sciences, 8(4), 21-25.

BibTex Style Citation:
@article{Ikeri_2021,
author = {H.I. Ikeri, A.I. Onyia, G.C. Ogbu, F.N. Kalu},
title = {Theoretical Characterization of Semiconductor Nano-structures for Infrared Device Applications},
journal = {World Academics Journal of Engineering Sciences},
issue_date = {12 2021},
volume = {8},
Issue = {4},
month = {12},
year = {2021},
issn = {2347-2693},
pages = {21-25},
url = {https://www.isroset.org/journal/WAJES/full_paper_view.php?paper_id=2664},
publisher = {IJCSE, Indore, INDIA},
}

RIS Style Citation:
TY - JOUR
UR - https://www.isroset.org/journal/WAJES/full_paper_view.php?paper_id=2664
TI - Theoretical Characterization of Semiconductor Nano-structures for Infrared Device Applications
T2 - World Academics Journal of Engineering Sciences
AU - H.I. Ikeri, A.I. Onyia, G.C. Ogbu, F.N. Kalu
PY - 2021
DA - 2021/12/31
PB - IJCSE, Indore, INDIA
SP - 21-25
IS - 4
VL - 8
SN - 2347-2693
ER -

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Abstract :
In this research, theoretical characterization of tunable infrared (IR) photo active materials with a few application oriented scenarios to illustrate the technological vitality and significant growth opportunities for integrated photonics in the IR regime is studied using effective mass approximation. The strong quantum confinement effect in QDs allows their optical wavelength to be tuned in a large spectral range covering infrared (IR) waveband by dimensional constraints. Results show that CdSe and CdS possess the trait for possible extension of their wavelength to emit in the NIR and should be further explored for infrared applications.By selective control of the sizes of QDs, emission wavelength within the first (650–950nm) and second (1000–1400nm)near-infrared biological transparency window were obtained for InAs, InSb, PbS, PbSe, and PbTe QDs, which allows for deeper tissue penetration imaging of biological systems. Our results suggest that QDs offer strong and widely tunable light absorption and emission across the infrared radiation waveband.These properties make QDs emerging candidates both as IR light emitters as well as IR absorbers suitable for biological imaging, solar energy harvesting, optical displays, photo-detectors, health technologies and communications. Among all the considered QDs, lead chalcogenides (PbS, PbSe and PbTe) QDs displayed an exceptional optical spectra that can be tuned in broadband of near to far IR, which is attractive both in IR technological applications and fundamental scientific research.

Key-Words / Index Term :
Infrared, quantum dots, absorption, emission, optical wavelength, confinement

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